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 VISHAY
BA979/BA979S
Vishay Semiconductors
RF PIN Diodes
Features
* Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable attenuators
9612009
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part BA979 BA979S Type differentiation VR = 30 V, Zr > 5 k VR = 30 V, Zr > 9 k Ordering code BA979-GS18 or BA979-GS08 BA979S-GS18 or BA979S-GS08 Remarks Tape and Reel Tape and Reel
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Forward current Test condition Symbol VR IF Value 30 50 Unit V mA
Thermal Characteristics
Tamb = 25 C, unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition on PC board 50 mm x 50 mm x 1.6 mm Symbol RthJA Tj Tstg Value 500 125 - 55 to + 125 Unit K/W C C
Document Number 85533 Rev. 1.4, 26-Apr-04
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BA979/BA979S
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance Reverse impedance Minority carrier lifetime Test condition IF = 20 mA VR = 30 V f = 100 MHz, VR = 0 f = 100 MHz, IF = 1.5 mA f = 100 MHz, VR = 0 IF = 10 mA, IR = 10 mA BA979 BA979S Part Symbol VF IR CD rf zr zr 5 9 4 Min Typ. Max 1 50 0.5 50
VISHAY
Unit V nA pF k k s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
a - Typical Cross Modulation Distortion ( dB )
100
IF - Forward Current ( mA )
20 - Circuit with 10 dB Attenuation V 0 = 40 dBmV f 1 = 100 MHz unmodulated -20 -40 -60 -80 0 20 40 60 80 f 2 , modulated with 200 kHz, m = 100% (MHz)
10 Tamb = 25C 1 Scattering Limit 0.1
0
0.01 0
95 9735
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage ( V )
95 9733
Fig. 1 Forward Current vs. Forward Voltage
Fig. 3 Typ. Cross Modulation Distortion vs. Frequency f2
10000
r f - Differential Forward Resistance ( ) i
1000
100 f > 20 MHz Tj = 25 C
10
1 0.001
0.01
0.1
1
10
95 9734
I F - Forward Current ( mA )
Fig. 2 Differential Forward Resistance vs. Forward Current
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Document Number 85533 Rev. 1.4, 26-Apr-04
VISHAY
Package Dimensions in mm (Inches)
BA979/BA979S
Vishay Semiconductors
(0 1. 7
1.5 0.1 (0.06 0.004)
Glass > R 3 (R 0.12)
0.47 max. (0.02) 3.5 0.2 (0.14 0.008)
Mounting Pad Layout
2.50 (0.098) max 1.25 (0.049) min
ISO Method E
G la
ss
.0 7
Cathode indification
)
Glass case Quadro Melf / SOD 80 JEDEC DO 213 AA
5 (0.197) ref
96 12071
Document Number 85533 Rev. 1.4, 26-Apr-04
2 (0.079) min
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BA979/BA979S
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com 4
Document Number 85533 Rev. 1.4, 26-Apr-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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